Datasheet4U Logo Datasheet4U.com

MM1001 - High Power RF LDMOS FET

MM1001 Description

MM1001 LDMOS TRANSISTOR 10W, 28V High Power RF LDMOS FETs .
The MM1001 is a 10-watt, highly rugged, unmatched LDMOS FET, designed for wide-band commercial and industrial applications at frequencies up to 2 GHz.

MM1001 Features

* High Efficiency and Linear Gain Operations
* Integrated ESD Protection

MM1001 Applications

* at frequencies up to 2 GHz. It can be used in Class AB/B and Class C for all typical modulation formats. Document Number: MM1001 Product Datasheet V4.0 MM1001
* Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 100 mA, CW. Frequency Gp (dB) P-1dB (W)

📥 Download Datasheet

Preview of MM1001 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
MM1001
Manufacturer
Innogration
File Size
755.05 KB
Datasheet
MM1001-Innogration.pdf
Description
High Power RF LDMOS FET

📁 Related Datasheet

  • MM1002 - Video Amplifier (MITSUMI)
  • MM1002F - Video Amplifier (MITSUMI)
  • MM1007 - HBS-Compatible Driver and Receiver (MITSUMI)
  • MM100F20B - FRED (MacMic)
  • MM102 - Metal Film MELF Resistor (Firstohm)
  • MM1024 - S Video Amplifier Monolithic IC MM1024 (ETC)
  • MM1024AF - S Video Amplifier Monolithic IC MM1024 (ETC)
  • MM1025 - (MM1025 / MM1174) System Reset (with battery back-up) Monolithic IC (MITSUMI ELECTRIC)

📌 All Tags

High Power LDMOS FET Innogration
Innogration MM1001-like datasheet