MM1001 High Power RF LDMOS FET

Innogration

Description

MM1001 LDMOS TRANSISTOR 10W, 28V High Power RF LDMOS FETs .
The MM1001 is a 10-watt, highly rugged, unmatched LDMOS FET, designed for wide-band commercial and industrial applications at frequencies up to 2 GHz.

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MM1001 Datasheet Preview — Preview of MM1001 PDF

Datasheet Specifications

Part number: MM1001
Manufacturer: Innogration
File Size: 755.05 KB
Datasheet: MM1001-Innogration.pdf
Description: High Power RF LDMOS FET

Features

* High Efficiency and Linear Gain Operations
* Integrated ESD Protection

Applications

* at frequencies up to 2 GHz. It can be used in Class AB/B and Class C for all typical modulation formats. Document Number: MM1001 Product Datasheet V4.0 MM1001
* Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 100 mA, CW. Frequency Gp (dB) P-1dB (W)

MM1001 Distributors

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MM1001 High Power LDMOS FET Innogration

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