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MM10R5 High Power RF LDMOS FET

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Description

MM10R5 LDMOS TRANSISTOR 5W, 28V High Power RF LDMOS FETs .
The MM10R5 is a 5-watt, highly rugged, unmatched LDMOS FET, designed for wide-band commercial and industrial applications at frequencies HF to 2.

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Datasheet Specifications

Part number
MM10R5
Manufacturer
Innogration
File Size
800.84 KB
Datasheet
MM10R5-Innogration.pdf
Description
High Power RF LDMOS FET

Features

* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Excellent thermal stability, low HCI drift
* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation

Applications

* at frequencies HF to 2.7 GHz. It can be used in Class AB/B and Class C for all typical modulation formats. Document Number: MM10R5 Product Datasheet V3.0 MM10R5
* Typical Performance (On Innogration fixture with device soldered): P-1dB= 5 Watts @ 1000 MHz, VDD = 28 Volts, IDQ = 40 mA, CW. Fre

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