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  Microchip Technology Semiconductor Electronic Components Datasheet  

MCP6C02 Datasheet

65V High-Side Current Sense Amplifier

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MCP6C02
Zero-Drift, 65V High-Side Current Sense Amplifier
Features
• Single Amplifier: MCP6C02
• Bidirectional or Unidirectional
• Input (Common-mode) Voltages:
- +3.0V to +65V, specified
- +2.8V to +68V, operating
- -0.3V to +70V, survival
• Power Supply:
- 2.0V to 5.5V
- Single or Dual (Split) Supplies
• High DC Precision
- VOS: ±1.65 μV (typical)
- CMRR: 154 dB (typical)
- PSRR: 138 dB (typical)
- Gain Error: ±0.1% (typical)
• Preset Gains: 20, 50 and 100 V/V
• POR Protection
- HV POR for VIP – VSS
- LV POR for VDD – VSS
• Bandwidth: 500 kHz (typical)
• Supply Current: 490 μA (typical)
• Enhanced EMI Protection:
- EMIRR: 118 dB at 2.4 GHz (typical)
• Extended Temperature Range (E-Temp):
- -40°C to +125°C
Typical Applications
• Motor Control
• Analog Level Shifter
• Industrial Computing
• Battery Monitor/Tester
General Description
The Microchip Technology Inc. MCP6C02 high-side
current sense amplifier is offered with preset gains of
20, 50 and 100 V/V. The Common-mode input range
(VIP) is +3V to +65V. The differential-mode input range
(VDM = VIP – VIM) supports unidirectional and
bidirectional applications.
The power supply can be set between 2.0V and 5.5V.
This device is specified from -40°C to +125°C (E-Temp)
and is provided in the SOT-23 package.
The Zero-Drift architecture supports very low input
errors, which allow a design to use shunt resistors of
lower value (and lower power dissipation).
Package Types
MCP6C02
6-Lead SOT-23
VOUT 1
VSS 2
VIP 3
6 VDD
5 VREF
4 VIM
Typical Application Circuit
10 nF
2.2 µF
100 nF
VBAT
+36V
RSH
2.2 m
IL < 20A
VL
+5V
U1 (DUT)
MCP6C02-100
VOUT
20 k
2018 Microchip Technology Inc.
DS20006129A-page 1


  Microchip Technology Semiconductor Electronic Components Datasheet  

MCP6C02 Datasheet

65V High-Side Current Sense Amplifier

No Preview Available !

MCP6C02
Functional Diagram
VDD
VIP GM1 I1 RM3
VIM I2
VOUT
VFG RF
GM2
RG
VSS
VREF
Gain Options
Table 1 shows key specifications that differentiate
between the three different differential gain (GDM)
options. See Section 1.0 “Electrical Characteris-
tics”, Section 6.0 “Packaging Information” and
Product Identification System for further information
on the GDM options available.
TABLE 1: KEY DIFFERENTIATING SPECIFICATIONS
Part No.
GDM
(V/V)
Nom.
VOS
μV)
Max.
TC1
(± nV/°C)
Max.
CMRR
(dB)
Min.
PSRR
(dB)
Min.
VDMH
(V)
Min.
MCP6C02-020 20
16
90
132 109 0.265
MCP6C02-050 50
14
70
138 115 0.106
MCP6C02-100 100 12
65
116 0.053
Note 1:
2:
3:
4:
VOS and TC1 limits are by design and characterization only.
TC1 covers the Extended Temperature Range (-40°C to +125°C).
CMRR is at VDD = 5.5V.
Eni is at f = 0.1 Hz to 10 Hz. eni is at f < 500 Hz.
BW
(kHz)
Typ.
500
390
Eni
(μVp-p)
Typ.
1.54
0.95
0.92
eni
(nV/Hz)
Typ.
74
46
44
DS20006129A-page 2
2018 Microchip Technology Inc.


Part Number MCP6C02
Description 65V High-Side Current Sense Amplifier
Maker Microchip
Total Page 30 Pages
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