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  Microchip Technology Semiconductor Electronic Components Datasheet  

MCP87030 Datasheet

High-Speed N-Channel Power MOSFET

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MCP87030
High-Speed N-Channel Power MOSFET
Features:
• Low Drain-to-Source On Resistance (RDS(ON))
• Low Total Gate Charge (QG) and Gate-to-Drain
Charge (QGD)
• Low Series Gate Resistance (RG)
• Fast Switching
• Capable of Short Dead-Time Operation
• RoHS Compliant
Applications:
• Point-of-Load DC-DC Converters
• High-Efficiency Power Management in Servers,
Networking and Automotive Applications
Package Type
PDFN 5 x 6
Description:
The MCP87030 is an N-Channel power MOSFET in a
popular PDFN 5 mm x 6 mm package. Advanced
packaging and silicon processing technologies allow
the MCP87030 to achieve a low QG for a given RDS(on)
value, resulting in a low Figure of Merit (FOM).
Combined with low RG, the low FOM of the MCP87030
allows high efficiency power conversion with reduced
switching and conduction losses.
S1
S2
S3
G4
8D
7D
6D
5D
Product Summary Table: Unless otherwise indicated, TA = +25°C
Parameters
Sym. Min. Typ. Max. Units
Conditions
Operating Characteristics
Drain-to-Source Breakdown Voltage
Gate-to-Source Threshold Voltage
Drain-to-Source On Resistance
Total Gate Charge
Gate-to-Drain Charge
Series Gate Resistance
BVDSS
VGS(TH)
RDS(ON)
QG
QGD
RG
25
1
——
V VGS = 0V, ID = 250 µA
1.3 1.6
V VDS = VGS, ID = 250 µA
3.3 4 mVGS = 4.5V, ID = 20A
2.8 3.5 mVGS = 10V, ID = 20A
17 22 nC VDS = 12.5V, ID = 20A, VGS = 4.5V
6.7 — nC VDS = 12.5V, ID = 20A
1.2 —
Thermal Characteristics
Thermal Resistance Junction-to-X
RθJX — — 55 °C/W Note 1
Thermal Resistance Junction-to-Case RθJC — — 1.2 °C/W Note 2
Note 1:
2:
RθJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1" x 1" mounting pad of
2 oz. copper. This characteristic is dependent on user’s board design.
RθJC is determined using JEDEC 51-14 Method. This characteristic is determined by design.
2013 Microchip Technology Inc.
DS200002328B-page 3


  Microchip Technology Semiconductor Electronic Components Datasheet  

MCP87030 Datasheet

High-Speed N-Channel Power MOSFET

No Preview Available !

MCP87030
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
VDS .......................................................................+25V
VGS........................................................... +10.0V / -8V
ID, Continuous ................................. 100A, TC = +25°C
PD.....................................................2.2W, TA = +25°C
TJ, TSTG..............................................-55°C to +150°C
EAS Avalanche Energy ..................................... 450 mJ
ID = 30A, L = 1 mH, RG = 25
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
DC ELECTRICAL CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C
Parameters
Sym. Min. Typ. Max.
Units
Conditions
Static Characteristics
Drain-to-Source
Breakdown Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
Gate-to-Source Threshold Voltage
Drain-to-Source On Resistance
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-to-Drain Charge
Gate-to-Source Charge
Gate Charge at VGS(TH)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Series Gate Resistance
gfs
CISS
COSS
CRSS
QG
QGD
QGS
QG(TH)
QOSS
td(on)
tr
td(off)
tf
RG
25
1
——
—1
— 100
1.3 1.6
4—
3.3 4
2.8 3.5
113 —
1635
730
160
17
6.7
3.2
2.1
14.3
5
17
14
16
1.2
22
V VGS = 0V, ID = 250 µA
µA VGS = 0V, VDS = 20V
nA VDS = 0V, VGS = 10V/-8V
V VDS = VGS, ID = 250 µA
mVGS = 3.3V, ID = 20A
mVGS = 4.5V, ID = 20A
mVGS = 10V, ID = 20A
S VDS = 12.5V, ID = 20A
pF VGS = 0V, VDS = 12.5V, f = 1 MHz
pF VGS = 0V, VDS = 12.5V, f = 1 MHz
pF VGS = 0V, VDS = 12.5V, f = 1 MHz
nC VDS = 12.5V, ID = 20A, VGS = 4.5V
nC VDS = 12.5V, ID = 20A
nC VDS = 12.5V, ID = 20A
nC VDS = 12.5V, ID = 20A
nC VDS = 12.5V, VGS = 0
ns VDS = 12.5V, VGS = 4.5V,
ID = 20A, RG = 2
ns VDS = 12.5V, VGS = 4.5V,
ID = 20A, RG = 2
ns VDS = 12.5V, VGS = 4.5V,
ID = 20A, RG = 2
ns VDS = 12.5V, VGS = 4.5V,
ID = 20A, RG = 2
DS200002328B-page 4
2013 Microchip Technology Inc.


Part Number MCP87030
Description High-Speed N-Channel Power MOSFET
Maker Microchip
Total Page 16 Pages
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