MCP87055 Description
The MCP87055 device is an N-Channel power MOSFET in a popular PDFN 3.3 mm x 3.3 mm package. Advanced packaging and silicon processing technologies allow the MCP87055 to achieve a low QG for a given RDS(on) value, resulting in a low Figure of Merit (FOM). bined with low RG, the low Figure of Merit of the MCP87055 allows high-efficiency power conversion with reduced switching and conduction losses.
MCP87055 Key Features
- Low Drain-to-Source On Resistance (RDS(ON))
- Low Total Gate Charge (QG) and Gate-to-Drain
- Low Series Gate Resistance (RG)
- Fast Switching
- Capable of Short Dead-Time Operation
- ROHS pliant