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  Microchip Technology Semiconductor Electronic Components Datasheet  

MCP87055 Datasheet

High-Speed N-Channel Power MOSFET

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MCP87055
High-Speed N-Channel Power MOSFET
Features
• Low Drain-to-Source On Resistance (RDS(ON))
• Low Total Gate Charge (QG) and Gate-to-Drain
Charge (QGD)
• Low Series Gate Resistance (RG)
• Fast Switching
• Capable of Short Dead-Time Operation
• ROHS Compliant
Applications
• Point-of-Load DC-DC Converters
• High Efficiency Power Management in Servers,
Networking, and Automotive Applications
Package Type
PDFN 3.3 x 3.3
Description
The MCP87055 device is an N-Channel power
MOSFET in a popular PDFN 3.3 mm x 3.3 mm
package. Advanced packaging and silicon processing
technologies allow the MCP87055 to achieve a low QG
for a given RDS(on) value, resulting in a low Figure of
Merit (FOM). Combined with low RG, the low Figure of
Merit of the MCP87055 allows high-efficiency power
conversion with reduced switching and conduction
losses.
S1
S2
S3
G4
8D
7D
6D
5D
Product Summary Table: Unless otherwise indicated, TA = +25˚C
Parameters
Sym Min Typ Max Units
Conditions
Operating Characteristics
Drain-to-Source Breakdown Voltage
BVDSS 25 — —
V VGS = 0V, ID = 250 µA
Gate-to-Source Threshold Voltage
VGS(TH) 1.1 1.35 1.7
V VDS = VGS, ID = 250 µA
Drain-to-Source On Resistance
Total Gate Charge
RDS(ON)
5.7
4.7
7
6
QG — 11 14
mVGS = 4.5V, ID = 20A
mVGS = 10V, ID = 20A
nC VDS = 12.5V, ID = 20A, VGS = 4.5V
Gate-to-Drain Charge
QGD
— 4.5 —
nC VDS = 12.5V, ID = 20A
Series Gate Resistance
RG — 2.1 —
Thermal Characteristics
Thermal Resistance Junction-to-X
RθJX
— — 66 ˚C/W Note 1
Thermal Resistance Junction-to-Case
RθJC
— — 3.4 ˚C/W Note 2
Note 1: RθJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of
2 oz. copper. This characteristic is dependent on user’s board design.
2: RθJC is determined using JEDEC 51-14 Method. This characteristic is determined by design.
2012 Microchip Technology Inc.
DS22323B-page 1


  Microchip Technology Semiconductor Electronic Components Datasheet  

MCP87055 Datasheet

High-Speed N-Channel Power MOSFET

No Preview Available !

MCP87055
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
VDS .......................................................................+25V
VGS........................................................... +10.0V / -8V
ID, Continuous ......................................60A, TC = 25˚C
PD..................................................... 1.8W, TA = +25˚C
TJ, TSTG.............................................. -55˚C to +150˚C
EAS Avalanche Energy ..................................... 162 mJ
ID = 18A, L = 1 mH, RG = 25
† Notice: Stresses above those listed under “Maxi-
mum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional oper-
ation of the device at those or any other conditions
above those indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
DC ELECTRICAL CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C
Parameters
Sym Min Typ Max Units
Conditions
Static Characteristics
Drain-to-Source
Breakdown Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
Gate-to-Source Threshold Voltage
Drain-to-Source On Resistance
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-to-Drain Charge
Gate-to-Source Charge
Gate Charge at VTH
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Series Gate Resistance
gfs
CISS
COSS
CRSS
QG
QGD
QGS
QG(TH)
QOSS
td(on)
tr
td(off)
tf
RG
25
1.1
——
1.35
5.7
4.7
92
1
100
1.7
7
6
890 —
420 —
114 —
11 14
4.5 —
1.8 —
1.1 —
8—
4.5 —
11 —
9—
4.6 —
2.1 —
V VGS = 0V, ID = 250 µA
µA VGS = 0V, VDS = 20V
nA VDS = 0V, VGS = 10V/-8V
V VDS = VGS, ID = 250 µA
mVGS = 4.5V, ID = 20A
mVGS = 10V, ID = 20A
S VDS = 12.5V, ID = 20A
pF VGS = 0V, VDS = 12.5V, f = 1 MHz
pF VGS = 0V, VDS = 12.5V, f = 1 MHz
pF VGS = 0V, VDS = 12.5V, f = 1 MHz
nC VDS = 12.5V, ID = 20A, VGS = 4.5V
nC VDS = 12.5V, ID = 20A
nC VDS = 12.5V, ID = 20A
nC VDS = 12.5V, ID = 20A
nC VDS = 12.5V, VGS = 0
ns VDS = 12.5V, VGS = 4.5V,
ID = 20A, RG = 2
ns VDS = 12.5V, VGS = 4.5V,
ID = 20A, RG = 2
ns VDS = 12.5V, VGS = 4.5V,
ID = 20A, RG = 2
ns VDS = 12.5V, VGS = 4.5V,
ID = 20A, RG = 2
DS22323B-page 2
2012 Microchip Technology Inc.


Part Number MCP87055
Description High-Speed N-Channel Power MOSFET
Maker Microchip
Total Page 16 Pages
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