MCP87090 Datasheet | Microchip Technology

Features : - Low Drain-to-Source On Resistance (RDS(ON)) - Low Total Gate Charge (QG) and Gate-to-Drain Charge (QGD) - Low Series Gate Resistance (RG) - Capable of Short Dead-Time Operation - Ro HS pliant Applications: - Point-of-Load DC-DC Converters - High Efficiency Power Management in Servers, Networking, and Automotive Applications Description : The MCP87090 is an N-Channel power MOSFET in a popular PDFN 5 mm x 6 mm package, as well as a PDFN 3.3 mm x 3.3 mm package. Advanced packaging and silicon processing technologies allow the MCP87090 to achieve a low QG for a given RDS(ON) value, resulting in a low Figure of Merit (FOM). bined with low RG, the low FOM of the MCP87090 device allows high efficiency power conversion with reduced switching and conduction losses. Package Type PDFN 5 x 6 PDFN 3.3 x 3.3 S1 8D S2 7D S3 6D G4 5D Product Summary Table: Unless otherwise indicated, TA = +25˚C Parameters Sym. Min. Typ. Max. Units Conditions Operating Characteristics Drain-to-Source Breakdown Voltage Gate-to-Source Threshold Voltage Drain-to-Source On Resistance Total Gate Charge Gate-to-Drain Charge Series Gate Resistance BVDSS 25 - - VGS(TH) 1.1 1.35 1.7 RDS(ON) - - 10 12 8.5 10.5 - 7.5...