Datasheet Summary
High-Speed N-Channel Power MOSFET
Features
- Low Drain-to-Source On Resistance (RDS(ON))
- Low Total Gate Charge (QG) and Gate-to-Drain
Charge (QGD)
- Low Series Gate Resistance (RG)
- Fast Switching
- Capable of Short Dead-Time Operation
- ROHS pliant
Applications
- Point-of-Load DC-DC Converters
- High Efficiency Power Management in Servers,
Networking, and Automotive Applications
Package Type
PDFN 3.3 x 3.3
Description
The MCP87055 device is an N-Channel power MOSFET in a popular PDFN 3.3 mm x 3.3 mm package. Advanced packaging and silicon processing technologies allow the MCP87055 to achieve a low QG for a given RDS(on) value, resulting in a low Figure of Merit (FOM)....