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MCP87055 - High-Speed N-Channel Power MOSFET

General Description

The MCP87055 device is an N-Channel power MOSFET in a popular PDFN 3.3 mm x 3.3 mm package.

Advanced packaging and silicon processing technologies allow the MCP87055 to achieve a low QG for a given RDS(on) value, resulting in a low Figure of Merit (FOM).

Key Features

  • Low Drain-to-Source On Resistance (RDS(ON)).
  • Low Total Gate Charge (QG) and Gate-to-Drain Charge (QGD).
  • Low Series Gate Resistance (RG).
  • Fast Switching.
  • Capable of Short Dead-Time Operation.
  • ROHS Compliant.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MCP87055 High-Speed N-Channel Power MOSFET Features • Low Drain-to-Source On Resistance (RDS(ON)) • Low Total Gate Charge (QG) and Gate-to-Drain Charge (QGD) • Low Series Gate Resistance (RG) • Fast Switching • Capable of Short Dead-Time Operation • ROHS Compliant Applications • Point-of-Load DC-DC Converters • High Efficiency Power Management in Servers, Networking, and Automotive Applications Package Type PDFN 3.3 x 3.3 Description The MCP87055 device is an N-Channel power MOSFET in a popular PDFN 3.3 mm x 3.3 mm package. Advanced packaging and silicon processing technologies allow the MCP87055 to achieve a low QG for a given RDS(on) value, resulting in a low Figure of Merit (FOM).