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MMA155PP5 Datasheet DC-22ghz 32dbm Distributed Power Amplifier

Manufacturer: Microchip Technology

Overview: MMA155PP5 DC–22 GHz 32dBm Distributed Power Amplifier Product Overview MMA155PP5 is a gallium arsenide (GaAs) monolithic microwaveintegrated circuit (MMIC) pseudomorphic highelectron - mobility tra nsistor (pHEMT) distributed a mplifier tha t opera tes between DC a nd 22 GHz. It is idea l for test instrumentation and wide-band military and space applications. The amplifier provides a gain of 15 dB, 3.5 dB noise figure, a nd 32 dBm of output power a t 3 dB ga in compression with a nomina l bia s condition of 640 mA from a 13V supply. Output IP3 is typically 35 dBm.

Key Features

  • RF I/Os that are internally matched to 50 Ω. Key Features.
  • Broadband performance: DC to 22 GHz.
  • High Gain: 15 dB.
  • Positive Gain Slope.
  • High Psat: 33 dBm at 12 GHz.
  • Supply: 13 V at 640 mA.
  • Integrated Temperature Compensated Power Detector.
  • 50 Ohm matched Input/Output.
  • Molded QFN 5x5mm Package.
  • Passivated space-qualified process listed on EPPL007-38 Functional Block Diagram.

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