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MMA042PP4

Manufacturer: Microchip Technology
MMA042PP4 datasheet preview

Datasheet Details

Part number MMA042PP4
Datasheet MMA042PP4-Microchip.pdf
File Size 537.45 KB
Manufacturer Microchip Technology
Description GaAs MMIC
MMA042PP4 page 2 MMA042PP4 page 3

MMA042PP4 Overview

MMA042PP4 2 26 GHz Distributed Self-Biased LNA Product Overview MMA042PP4 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic highelectron mobility transistor (pHEMT) distributed amplifier that operates between 2 GHz and 26 GHz. It is ideal for test instrumentation, defense, and space applications. The amplifier provides a 2 dB positive gain slope with a typical gain of 18 dB,...

MMA042PP4 Key Features

  • Frequency range: 2 to 26 GHz
  • High Gain: 18 dB with +2 dB upslope
  • Low Noise figure: 2.5 dB
  • High Output IP3: + 29 dBm
  • Maximum RF Input Power: + 24 dBm
  • Single Positive Supply: +6V @ 120 mA (+8V VDD max)
  • ESD Protection on RF and DC ports
  • 50 Ω matched input/output

MMA042PP4 Applications

  • Frequency range: 2 to 26 GHz
  • High Gain: 18 dB with +2 dB upslope
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