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MMA042PP4 - GaAs MMIC

Key Features

  • RF I/Os that are internally matched to 50 Ω. Key Features.
  • Frequency range: 2 to 26 GHz.
  • High Gain: 18 dB with +2 dB upslope.
  • Low Noise figure: 2.5 dB.
  • High Output IP3: + 29 dBm.
  • Maximum RF Input Power: + 24 dBm.
  • Single Positive Supply: +6V @ 120 mA (+8V VDD max).
  • ESD Protection on RF and DC ports.
  • 50 Ω matched input/output Functional Block Diagram VDD 24 23 22 21 20 19 1 2 3 RFIN 4 RFIN 5 MMA042PP4 18 17 16 RFOUT 15 R.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MMA042PP4 2 – 26 GHz Distributed Self-Biased LNA Product Overview MMA042PP4 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic highelectron mobility transistor (pHEMT) distributed amplifier that operates between 2 GHz and 26 GHz. It is ideal for test instrumentation, defense, and space applications. The amplifier provides a 2 dB positive gain slope with a typical gain of 18 dB, 2.5 dB noise figure, 19 dBm of output power at 1 dB gain compression, and 29 dBm output IP3 at 10 GHz. The MMA042PP4 amplifier features RF I/Os that are internally matched to 50 Ω. Key Features • Frequency range: 2 to 26 GHz • High Gain: 18 dB with +2 dB upslope • Low Noise figure: 2.