MMA042PP4 Description
MMA042PP4 2 26 GHz Distributed Self-Biased LNA Product Overview MMA042PP4 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic highelectron mobility transistor (pHEMT) distributed amplifier that operates between 2 GHz and 26 GHz. It is ideal for test instrumentation, defense, and space applications. The amplifier provides a 2 dB positive gain slope with a typical gain of 18 dB,...
MMA042PP4 Key Features
- Frequency range: 2 to 26 GHz
- High Gain: 18 dB with +2 dB upslope
- Low Noise figure: 2.5 dB
- High Output IP3: + 29 dBm
- Maximum RF Input Power: + 24 dBm
- Single Positive Supply: +6V @ 120 mA (+8V VDD max)
- ESD Protection on RF and DC ports
- 50 Ω matched input/output
MMA042PP4 Applications
- Frequency range: 2 to 26 GHz
- High Gain: 18 dB with +2 dB upslope