Microchip Technology MMA042PP4
MMA042PP4 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic highelectron mobility transistor (pHEMT) distributed amplifier that operates between 2 GHz and 26 GHz. It is ideal for test instrumentation, defense, and space applications. The amplifier provides a 2 dB positive gain slope with a typical gain of 18 dB, 2.5 dB noise figure, 19 dBm of output power at 1 dB gain compression, and 29 dBm output IP3 at 10 GHz.| Part No. | MMA042PP4 |
|---|---|
| Datasheet | MMA042PP4 Download |
| Manufacturer |  Microchip Technology |
| Description | GaAs MMIC |
| Buy | Stock & Price |
FEATURES
● Frequency range: 2 to 26 GHz● High Gain: 18 dB with +2 dB upslope
● Low Noise figure: 2.5 dB
● High Output IP3: + 29 dBm
● Maximum RF Input Power: + 24 dBm
● Single Positive Supply: +6V @ 120 mA (+8V VDD max)
● ESD Protection on RF and DC ports
● 50 Ω matched input/output Functional Block Diagram VDD 24 23 22 21 20 19 1 2 3 RFIN 4 RFIN 5 MMA042PP4 18 17 16 RFOUT 15 RFOUT 14
APPLICATIONS
6 13 GND PACKAGE 7 8 9 10 11 12 BASE VSB VGA VGB● Test and measurement instrumentation
● Electronic warfare (EW), electronic countermeasures (ECM), and electronic counter-countermeasures (ECCM)
● Military and space
● Telecom infrastructure
● Wideband microwave radios
● Microwave and millimeter-wave communication systems Performance Overview Gain, OIP3& NF Performances 35 7 Gain OIP3 NF 30 6 25 5 Gain (dB) & OIP3 (dBm) NF (dB) Parameter Typ. Units 20 4 Frequency range 2 – 26 GHz Gain 18 dB 15 3 Gain flatness ± 0.75 dB NF 2.5 dB 10 2 Output IP3 Export Classification: EAR99 + 29 dBm 5 1 0 5 1F0reque1n5cy (GH2z0) 25 30 © 2021 Microchip Technology Inc. and its subsidiaries Draft Datasheet A-page 1 MMA042PP4 Table of Contents Product Overview.
