MSC080SMA120J
MSC080SMA120J is N-Channel Power MOSFET manufactured by Microchip Technology.
Overview
1200V, 80 mΩ typical at VGS = 20V, 90 mΩ typical at VGS = 18V, Silicon Carbide (Si C) N-Channel MOSFET, SOT-227.
DRAIN
(TERMINAL 2)
GATE
(TERMINAL 1)
SOURCE
(TERMINALS 3, 4)
Features
- Low capacitances and low gate charge
- Fast switching speed due to low internal gate resistance (ESR)
- Stable operation at high junction temperature, TJ(max) = 175 °C
- Fast and reliable body diode
- Superior avalanche ruggedness
- Ro HS pliant
- Isolated voltage to 2500V, UL certified file E145592 Benefits
- High efficiency to enable lighter and more pact system
- Simple to drive and easy to parallel
- Improved thermal capabilities and lower switching losses
- Eliminates the need for external freewheeling diode
- Lower system cost of ownership Applications
- Photovoltaic (PV) inverter, converter, and industrial motor drives
- Smart grid transmission and distribution
- Induction heating and welding
- Hybrid Electric Vehicle (HEV) powertrain and Electric Vehicle (EV) charger
- Power supply and distribution
Data Sheet
© 2024 Microchip Technology Inc. and its subsidiaries
DS00004138D
- 1
MSC080SMA120J Device Specifications
1.
Device Specifications
This section shows the specifications of this...
