Datasheet Summary
700V, 10A Silicon Carbide Schottky Dual Diode
Product Overview
The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microchip increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. The MSC010SDA070BCT device is a 700 V, 10 A SiC dual mon cathode SBD in a three-lead TO-247 package.
Features
The following are key Features of the MSC010SDA070BCT device:
- No reverse recovery
- Low forward voltage
- Low leakage current
- Avalanche-energy rated
- RoHS pliant
Benefits
The following are benefits of the MSC010SDA070BCT device:
- High switching frequency
- Low switching losses
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