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MSC010SDA070BCT - 10A Silicon Carbide Schottky Dual Diode

Key Features

  • The following are key features of the MSC010SDA070BCT device:.
  • No reverse recovery.
  • Low forward voltage.
  • Low leakage current.
  • Avalanche-energy rated.
  • RoHS compliant Benefits The following are benefits of the MSC010SDA070BCT device:.
  • High switching frequency.
  • Low switching losses.
  • Low noise (EMI) switching.
  • Higher reliability systems.
  • Increased system power density.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSC010SDA070BCT 700V, 10A Silicon Carbide Schottky Dual Diode Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microchip increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. The MSC010SDA070BCT device is a 700 V, 10 A SiC dual common cathode SBD in a three-lead TO-247 package.