Datasheet Summary
Zero Recovery Silicon Carbide Schottky Diode
Product Overview
The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. The MSC010SDA070S device is a 700 V, 10 A SiC SBD in a TO-268 (D3PAK) package.
Features
The following are key Features of the MSC010SDA070S device:
- No reverse recovery
- Low forward voltage
- Low leakage current
- Avalanche-energy rated
- RoHS pliant
Benefits
The following are benefits of the MSC010SDA070S device:
- High switching frequency
- Low switching losses
- Low noise (EMI) switching
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