Title | MOSFET SIC 1200 V 360 MOHM TO-24 |
Description | MSC360SMA120B Silicon Carbide N-Channel Power MOSFET Product Overview The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC360SMA120B device is a 1200 V, 360 mΩ SiC MOSFET in a TO-247 package. Features The following are key feature... |
Features |
The following are key features of the MSC360SMA120B device:
• Low capacitances and low gate charge • Fast switching speed due to low internal gate resistance (ESR) • Stable operation at high junction temperature, TJ(max) = 175 °C • Fast and reliable body diode • Superior avalanche ruggedness • RoHS compliant Benefits The following are benefits of t... |
Datasheet |
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Distributor |
![]() DigiKey |
Stock | 138 In stock |
Price |
100 units: 7270.1 KRW 25 units: 8351.96 KRW 1 units: 9059 KRW
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BuyNow |
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Distributor | Stock | Price | BuyNow |
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![]() DigiKey |
100 units: 7270.1 KRW 25 units: 8351.96 KRW 1 units: 9059 KRW |
BuyNow |
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![]() Mouser Electronics |
1 units: 6.28 USD 30 units: 5.79 USD 510 units: 5.04 USD |
BuyNow |
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![]() Microchip Technology Inc |
500 units: 4.7 USD 100 units: 5.04 USD 1 units: 6.28 USD |
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![]() Onlinecomponents.com |
150 units: 5.14 USD 113 units: 5.24 USD 75 units: 5.64 USD 38 units: 7.42 USD |
BuyNow |
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![]() Verical |
9 units: 6.3 USD |
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![]() Future Electronics |
30 units: 5.23 USD |
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![]() TME |
10 units: 6.67 USD 3 units: 7.55 USD 1 units: 8.38 USD |
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![]() Richardson RFPD |
1 units: 5.16 USD 50 units: 5.03 USD 100 units: 4.96 USD |
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![]() EBV Elektronik |
No price available |
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![]() Master Electronics |
150 units: 5.14 USD 113 units: 5.24 USD 75 units: 5.64 USD 38 units: 7.42 USD |
BuyNow |