Datasheet Summary
Three-Phase Bridge High-Speed IGBT 4 Power Module
Product Overview
The MSCGLQ25X120CRTBL3NG device is a three-phase bridge high-speed 1200V, 25A Insulated-Gate Bipolar Transistor (IGBT) 4 power module. The following figures show the electrical diagram and pinout location of the device. Figure 1. Electrical Diagram
Figure 2. Pinout Location
Note: All ratings are at TJ = 25 °C, unless otherwise specified. CAUTION These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed.
Data Sheet
© 2023 Microchip Technology Inc. and its subsidiaries
DS00005017A
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Features
The MSCGLQ25X120CRTBL3NG device has the following key Features
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