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TC8020 - Dual-Channel MOSFET

General Description

The TC8020 consists of six pairs of high-voltage, low-threshold N-channel and P-channel MOSFETs in a 56-lead VQFN package.

Key Features

  • High-voltage Vertical DMOS Technology.
  • Integrated Gate-to-Source Resistor.
  • Integrated Gate-to-Source Zener Diode.
  • +/.
  • 3.5A at 50V Typical Peak Output.
  • Low Threshold, Low On-resistance.
  • Low Input and Output Capacitance.
  • Fast Switching Speeds.
  • Electrically Isolated N-channel and P-channel MOSFET Pairs.

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Full PDF Text Transcription (Reference)

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TC8020 Six-Pair N-Channel and P-Channel Enhancement-Mode MOSFET Features • High-voltage Vertical DMOS Technology • Integrated Gate-to-Source Resistor • Integrated Gate-to-Source Zener Diode • +/–3.5A at 50V Typical Peak Output • Low Threshold, Low On-resistance • Low Input and Output Capacitance • Fast Switching Speeds • Electrically Isolated N-channel and P-channel MOSFET Pairs Applications • High-voltage Pulsers • Amplifiers • Buffers • Piezoelectric Transducer Drivers • General Purpose Line Drivers • Logic-level Interfaces General Description The TC8020 consists of six pairs of high-voltage, low-threshold N-channel and P-channel MOSFETs in a 56-lead VQFN package.