FEATURES
►►High voltage, vertical DMOS technology ►►Integrated gate-to-source resistor ►►Integrated gate-to-source Zener diode ►►Typical peak output +/-3.5A at 50V ►►Low threshold, low on-resistance ►►Low input & output capacitance ►►Fast switching speeds ►►Electrically isolated N- and P-MOSFET pairs APPLICATIONS
►►High voltage pulsers ►► Amplifiers ►► Buffers ►►Piezoelectric transducer drivers ►►General purpose line drivers ►►Logic level interfaces GENERAL DESCRIPTION
All MOSFETs have integrated gate-to-source resistors and gate-to-source Zener diode clamps which are desired for high voltage pulser applications. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range o...
Supertex
