TN2130 - N-Channel Vertical DMOS FET

Product Overview

Microchip

Datasheet Details

Part number	TN2130
Manufacturer	Microchip
File Size	802.28 KB
Description	N-Channel Vertical DMOS FET
Datasheet	TN2130 Datasheet
Additional preview pages of the TN2130 datasheet.

Product details

Description

The TN2130 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process.

Features

Free from Secondary Breakdown.
Low Power Drive Requirement.
Ease of Paralleling.
Low CISS and Fast Switching Speeds.
Excellent Thermal Stability.
Integral Source-Drain Diode.
High Input Impedance and High Gain.

📁 Similar Datasheet

TN210 - Adapting HC 908GZ16 Stationery for HC908GZ8 (ETC)
TN2106 - N-Channel Enhancement-Mode Vertical DMOS FETs (Supertex Inc)
TN2124 - N-Channel Enhancement-Mode Vertical DMOS FETs (Supertex Inc)
TN2-12 - SLIM POLARIZED RELAY (Matsushita Electric Works(Nais))
TN2-12V - SLIM POLARIZED RELAY (Panasonic)
TN2-24V - SLIM POLARIZED RELAY (Panasonic)
TN2-3V - SLIM POLARIZED RELAY (Panasonic)
TN2-4.5V - SLIM POLARIZED RELAY (Panasonic)

Other Datasheets by Microchip

TN2425 - N-Channel Vertical DMOS FET
TN2435 - N-Channel Vertical DMOS FET
TN2501 - N-Channel Vertical DMOS FET
TN2504 - N-Channel Vertical DMOS FET
TN2510 - N-Channel Vertical DMOS FET
TN2524 - N-Channel Vertical DMOS FET

Published: Jan 22, 2024 |