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VN2110 - N-Channel Vertical DMOS FET

General Description

The VN2110 low-threshold, Enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and a well-proven silicon-gate manufacturing process.

Key Features

  • Free from Secondary Breakdown.
  • Low Power Drive Requirement.
  • Ease of Paralleling.
  • Low CISS and Fast Switching Speeds.
  • High Input Impedance and High Gain.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VN2110 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • Low CISS and Fast Switching Speeds • High Input Impedance and High Gain Applications • Motor Controls • Converters • Amplifiers • Switches • Power Supply Circuits • Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) General Description The VN2110 low-threshold, Enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices.