Microchip Technology VRF2933MP
The VRF2933(MP) is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.| Part No. | VRF2933MP |
|---|---|
| Datasheet | VRF2933MP Download |
| Manufacturer |  Microchip Technology |
| Description | RF Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Improved ruggedness V(BR)DSS = 170 V● 300 W with 22 dB typical gain at 30 MHz, 50 V
● Excellent stability and low IMD
● Common source configuration
● Available in matched pairs (VRF2933MP)
● 70:1 load VSWR capability at specified operating conditions
● Nitride passivated
● Refractory gold metallization
● High voltage replacement for SD2933
● Thermally enhanced package
● RoHS compliant © 2022 Microchip Technology Inc. and its subsidiaries Datasheet DS00004434A-page 1 VRF2933, VRF2933MP Device Specifications 1. Device Specifications This section shows the specifications of the VRF2933(MP) device. 1.1
ABSOLUTE MAXIMUM RATINGS
The following table shows the absolute maximum ratings of the VRF2933(MP) device. TC = 25 °C unless otherwise specified. Table 1-1.ABSOLUTE MAXIMUM RATINGS
Symbol VDSS ID VGS PD TSTG TJ Parameter Drain source voltage Continuous drain current Gate-source voltage Total power dissipation Storage temperature range Operating junction temperature Ratings Unit 170 V 42 A ±40 V 648 W –65 to 150 °C 200 1.2 Electrical Performance The following table shows the static characteristics of the VRF2933(MP) device.
