Microsemi VRF2933MP
The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.| Part No. | VRF2933MP |
|---|---|
| Datasheet | VRF2933MP Download |
| Manufacturer |  Microsemi |
| Description | RF POWER VERTICAL MOSFET |
| Buy | Stock & Price |
FEATURES
● Improved Ruggedness V(BR)DSS = 170V● 300W with 22dB Typ. Gain @ 30MHz, 50V
● Excellent Stability & Low IMD
● Common Source Configuration
● Available in Matched Pairs
● 3:1 Load VSWR Capability at Specified Operating Conditions
● Nitride Passivated
● Refractory Gold Metallization
● Improved Replacement for SD2933
● Thermally Enhanced Package
● RoHS Compliant
MAXIMUM RATINGS
Symbol Parameter VDSS Drain-Source Voltage ID Continuous Drain Current @ TC = 25°C VGS Gate-Source Voltage PD Total Device dissipation @ TC = 25°C TSTG Storage Temperature Range TJ Operating Junction Temperature Max All Ratings: TC =25°C unless otherwise specified VRF2933(MP) Unit 170 V 40 A ±40 V 648 W -65 to 150 200 °C StaticELECTRICAL CHARACTERISTICS
Symbol V(BR)DSS VDS(ON) IDSS IGSS Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) On State Drain Voltage (ID(ON) = 20A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) gf...
