VRF2933MP Datasheet | Microchip Technology

Overview The VRF2933(MP) is a gold-metallized silicon n-channel RF power transistor designed for broadband mercial and military applications requiring high power and gain without promising reliability, ruggedness, or intermodulation distortion. Adding MP at the end of part number specifies a matched pair where VGS(TH) is matched between the two parts. Features - Improved ruggedness V(BR)DSS = 170 V - 300 W with 22 d B typical gain at 30 MHz, 50 V - Excellent stability and low IMD - mon source configuration - Available in matched pairs (VRF2933MP) - 70:1 load VSWR capability at specified operating conditions - Nitride passivated - Refractory gold metallization - High voltage replacement for SD2933 - Thermally enhanced package - Ro HS pliant © 2022 Microchip Technology Inc. and its subsidiaries DS00004434A-page 1 VRF2933, VRF2933MP Device Specifications 1. Device Specifications This section shows the specifications of the VRF2933(MP) device. 1.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings of the VRF2933(MP) device. TC = 25 °C unless otherwise specified. Table 1-1. Absolute Maximum Ratings Symbol VDSS ID VGS PD TSTG TJ Parameter Drain source voltage Continuous drain current Gate-source voltage Total power dissipation Storage temperature range Operating junction temperature Ratings Unit ±40 - 65 to 150 °C 1.2 Electrical Performance The following table shows the static characteristics of the VRF2933(MP) device. TC = 25 °C unless otherwise specified. Table 1-2. Static Characteristics Symbol Characteristic V(BR)DSS VDS(ON) IDSS IGSS gfs VGS(th) Drain-source breakdown voltage On-state drain voltage Zero gate voltage drain current Gate-source leakage current Forward transconductance Gate-source threshold voltage Test Conditions VGS = 0 V, ID = 100 m A ID(ON) = 20 A, VGS = 10 V VDS = 100 V, VGS = 0 V VDS = ±20 V, VDS = 0 V VDS = 10 V, ID = 20 A VDS = 10 V, ID = 100 m...