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VRF2933MP - RF Power MOSFET

Download the VRF2933MP datasheet PDF. This datasheet also covers the VRF2933 variant, as both devices belong to the same rf power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Improved ruggedness V(BR)DSS = 170 V.
  • 300 W with 22 dB typical gain at 30 MHz, 50 V.
  • Excellent stability and low IMD.
  • Common source configuration.
  • Available in matched pairs (VRF2933MP).
  • 70:1 load VSWR capability at specified operating conditions.
  • Nitride passivated.
  • Refractory gold metallization.
  • High voltage replacement for SD2933.
  • Thermally enhanced package.
  • RoHS compliant © 2022 Microchip Techn.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (VRF2933-Microchip.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
VRF2933, VRF2933MP 50 V, 300 W, 150 MHz RF Power MOSFET Product Overview The VRF2933(MP) is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion. Adding MP at the end of part number specifies a matched pair where VGS(TH) is matched between the two parts.