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VRF2933MP - RF Power MOSFET

This page provides the datasheet information for the VRF2933MP, a member of the VRF2933 RF Power MOSFET family.

Datasheet Summary

Features

  • Improved ruggedness V(BR)DSS = 170 V.
  • 300 W with 22 dB typical gain at 30 MHz, 50 V.
  • Excellent stability and low IMD.
  • Common source configuration.
  • Available in matched pairs (VRF2933MP).
  • 70:1 load VSWR capability at specified operating conditions.
  • Nitride passivated.
  • Refractory gold metallization.
  • High voltage replacement for SD2933.
  • Thermally enhanced package.
  • RoHS compliant © 2022 Microchip Techn.

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Datasheet preview – VRF2933MP

Datasheet Details

Part number VRF2933MP
Manufacturer Microchip
File Size 432.21 KB
Description RF Power MOSFET
Datasheet download datasheet VRF2933MP Datasheet
Additional preview pages of the VRF2933MP datasheet.

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Full PDF Text Transcription

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VRF2933, VRF2933MP 50 V, 300 W, 150 MHz RF Power MOSFET Product Overview The VRF2933(MP) is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion. Adding MP at the end of part number specifies a matched pair where VGS(TH) is matched between the two parts.
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