VRF2933
VRF2933 is RF POWER VERTICAL MOSFET manufactured by Microsemi.
FEATURES
- Improved Ruggedness V(BR)DSS = 170V
- 300W with 22d B Typ. Gain @ 30MHz, 50V
- Excellent Stability & Low IMD
- mon Source Configuration
- Available in Matched Pairs
- 3:1 Load VSWR Capability at Specified Operating Conditions
- Nitride Passivated
- Refractory Gold Metallization
- Improved Replacement for SD2933
- Thermally Enhanced Package
- Ro HS pliant
Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Continuous Drain Current @ TC = 25°C VGS Gate-Source Voltage
PD Total Device dissipation @ TC = 25°C TSTG Storage Temperature Range
TJ Operating Junction Temperature Max
All Ratings: TC =25°C unless otherwise specified
VRF2933(MP)
Unit
170 V
40 A
±40 V
648 W
-65 to 150 200
°C
Static Electrical Characteristics
Symbol V(BR)DSS VDS(ON)
IDSS IGSS
Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 100m A) On State Drain Voltage (ID(ON) = 20A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) gfs Forward Transconductance (VDS = 10V, ID = 20A)
VGS(TH)
Gate Threshold Voltage (VDS = 10V, ID = 100m A)
Min Typ Max Unit
170 180 1.8 2.8
2.0 m...
