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VRF2933 - RF POWER VERTICAL MOSFET

Key Features

  • Improved Ruggedness V(BR)DSS = 170V.
  • 300W with 22dB Typ. Gain @ 30MHz, 50V.
  • Excellent Stability & Low IMD.
  • Common Source Configuration.
  • Available in Matched Pairs.
  • 3:1 Load VSWR Capability at Specified Operating Conditions.
  • Nitride Passivated.
  • Refractory Gold Metallization.
  • Improved Replacement for SD2933.
  • Thermally Enhanced Package.
  • RoHS Compliant Maximum Ratings Symbol Par.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RF POWER VERTICAL MOSFET The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. VRF2933 VRF2933MP 50V, 300W, 150MHz D SS G FEATURES • Improved Ruggedness V(BR)DSS = 170V • 300W with 22dB Typ.