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VRF2933 - RF Power MOSFET

Key Features

  • Improved ruggedness V(BR)DSS = 170 V.
  • 300 W with 22 dB typical gain at 30 MHz, 50 V.
  • Excellent stability and low IMD.
  • Common source configuration.
  • Available in matched pairs (VRF2933MP).
  • 70:1 load VSWR capability at specified operating conditions.
  • Nitride passivated.
  • Refractory gold metallization.
  • High voltage replacement for SD2933.
  • Thermally enhanced package.
  • RoHS compliant © 2022 Microchip Techn.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VRF2933, VRF2933MP 50 V, 300 W, 150 MHz RF Power MOSFET Product Overview The VRF2933(MP) is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion. Adding MP at the end of part number specifies a matched pair where VGS(TH) is matched between the two parts.