M58BW16F
Features
M58BW16F, M58BW32F
16Mb or 32Mb (x32, Boot Block, Burst) 3.3V Supply Flash Memory
Features
- Supply voltage
- VDD = 2.7- 3.6V (45ns) or VDD = 2.5- 3.3V (55ns)
- VDDQ = VDDQIN = 2.4V to VDD for I/O buffers
- High performance
- Access times: 45ns and 55ns
- Synchronous burst reads
- 75 MHz effective zero wait-state burst read
- Asynchronous page reads (4 double words)
- M58BW32F memory organization:
- Eight 64 Kbit small parameter blocks
- Four 128 Kbit large parameter blocks
- Sixty-two 512 Kbit main blocks
- M58BW16F memory organization:
- Eight 64 Kbit parameter blocks
- Thirty-one 512 Kbit main blocks
- Hardware block protection
- WP# pin to protect any block bination from PROGRAM and ERASE operations
- PEN signal for program/erase enable
- Irreversible modify protection (OTP like) on 128 Kbits:
- Block 1 (bottom device) or block 72 (top device) in the M58BW32F
- Blocks 2 and 3 (bottom device) or blocks 36...
