M58BW16F

M58BW16F Key Features

• Supply voltage
• VDD = 2.7-3.6V (45ns) or VDD = 2.5-3.3V (55ns)
• VDDQ = VDDQIN = 2.4V to VDD for I/O buffers
• High performance
• Access times: 45ns and 55ns
• Synchronous burst reads
• 75 MHz effective zero wait-state burst read
• Asynchronous page reads (4 double words)
• M58BW32F memory organization
• Eight 64 Kbit small parameter blocks