M58BW16F Description
13 2 Signal descriptions . 20 Data Inputs/Outputs (DQ0-DQ31) . 21 Reset/Power-Down (RP).
M58BW16F Key Features
- VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers High performance
- Access times: 45 and 55ns
- Synchronous Burst Reads
- 75MHz Effective Zero Wait-State Burst Read
- Asynchronous Page Reads M58BW32F memory organization
- Eight 64 Kbit small parameter blocks
- Four 128 Kbit large parameter blocks
- Sixty-two 512 Kbit main blocks M58BW16F memory organization
- Eight 64 Kbit parameter blocks
- Thirty-one 512 Kbit main blocks Hardware block protection