M58BW16F Overview
Key Features
- Supply voltage – VDD = 2.7–3.6V (45ns) or VDD = 2.5–3.3V (55ns) – VDDQ = VDDQIN = 2.4V to VDD for I/O buffers
- M58BW32F memory organization: – Eight 64 Kbit small parameter blocks – Four 128 Kbit large parameter blocks – Sixty-two 512 Kbit main blocks
- M58BW16F memory organization: – Eight 64 Kbit parameter blocks – Thirty-one 512 Kbit main blocks
- Hardware block protection – WP# pin to protect any block combination from PROGRAM and ERASE operations – PEN signal for program/erase enable