M58WR064KB
Overview
- Supply voltage - VDD = 1.7V to 2V for PROGRAM, ERASE and READ - VDDQ = 1.7V to 2V for I/O buffers - VPP = 9V for fast program
- SYCHRONOUS/ASYCHRONOUS READ - SYCHRONOUS BURST READ mode: 66 MHz - Asynchronous/synchronous page READ mode - Random access times: 70ns
- SYCHRONOUS BURST READ SUSPEND
- Programming time - 10µs by word typical for fast factory program - Double/quadruple word program option - Enhanced factory program options
- Memory blocks - Multiple bank memory array: 4Mb banks - Parameter blocks (top or bottom location)
- Dual operations - PROGRAM ERASE in one bank while read in others - No delay between read and write operations
- Block locking - All blocks locked at power-up - Any combination of blocks can be locked - WP# for block lock-dow
