M58WR064KT Overview
Key Specifications
Pins: 56
Operating Voltage: 1.8 V
Max Voltage (typical range): 2 V
Min Voltage (typical range): 1.7 V
Key Features
- Supply voltage – VDD = 1.7V to 2V for PROGRAM, ERASE and READ – VDDQ = 1.7V to 2V for I/O buffers – VPP = 9V for fast program
- SYCHRONOUS/ASYCHRONOUS READ – SYCHRONOUS BURST READ mode: 66 MHz – Asynchronous/synchronous page READ mode – Random access times: 70ns
- SYCHRONOUS BURST READ SUSPEND
- Programming time – 10µs by word typical for fast factory program – Double/quadruple word program option – Enhanced factory program options
- Memory blocks – Multiple bank memory array: 4Mb banks – Parameter blocks (top or bottom location)
- Dual operations – PROGRAM ERASE in one bank while read in others – No delay between read and write operations
- Block locking – All blocks locked at power-up – Any combination of blocks can be locked – WP# for block lock-dow
