M58WR064KU Datasheet | STMicroelectronics

M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories Features - Supply voltage - VDD = 1.7 V to 2 V for Program, Erase and Read - VDDQ = 1.7 V to 2 V for I/O buffers - VPP = 9 V for fast Program Multiplexed address/data Synchronous / Asynchronous Read - Synchronous Burst Read mode: 86 MHz - Random Access: 60 ns, 70 ns Synchronous Burst Read Suspend Programming time - 10 µs by Word typical for Factory Program - Double/Quadruple Word Program option - Enhanced Factory Program options Memory blocks - Multiple Bank memory array: 4 Mbit Banks - Parameter Blocks (top or bottom location) Dual...