M58WR064HT Datasheet | STMicroelectronics

.. M58WR064HT M58WR064HB 64 Mbit (4 Mb x16, multiple bank, burst) 1.8 V supply Flash memories Features - Supply voltage - VDD = 1.7 V to 2 V for program, erase and read - VDDQ = 1.7 V to 2.24 V for I/O buffers - VPP = 12 V for fast program (optional) Synchronous/asynchronous read - Synchronous burst read mode: 66 MHz - Asynchronous/synchronous page read mode - Random access: 60 ns, 70 ns Synchronous burst read suspend Programming time - 8 µs by word typical for fast factory program - Double/quadruple word program option - Enhanced factory program options Memory blocks - Multiple bank memory array: 4 Mbit banks - Parameter blocks (top or bottom location) Dual operations -...