M58WR064HB Overview
13 Data input/output (DQ0-DQ15) . 14 VPP program supply voltage.
M58WR064HB Key Features
- VDD = 1.7 V to 2 V for program, erase and read
- VDDQ = 1.7 V to 2.24 V for I/O buffers
- VPP = 12 V for fast program (optional) Synchronous/asynchronous read
- Synchronous burst read mode: 66 MHz
- Asynchronous/synchronous page read mode
- Random access: 60 ns, 70 ns Synchronous burst read suspend Programming time
- 8 µs by word typical for fast factory program
- Double/quadruple word program option
- Enhanced factory program options Memory blocks
- Multiple bank memory array: 4 Mbit banks
