Datasheet4U Logo Datasheet4U.com

M58WR064HB - 1.8 V supply Flash memories

General Description

.

.

.

.

Key Features

  • Supply voltage.
  • VDD = 1.7 V to 2 V for program, erase and read.
  • VDDQ = 1.7 V to 2.24 V for I/O buffers.
  • VPP = 12 V for fast program (optional) Synchronous/asynchronous read.
  • Synchronous burst read mode: 66 MHz.
  • Asynchronous/synchronous page read mode.
  • Random access: 60 ns, 70 ns Synchronous burst read suspend Programming time.
  • 8 µs by word typical for fast factory program.
  • Double/quadruple word program option.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
M58WR064B FLASH MEMORY STMicroelectronics
M58WR064KB 64Mb Multi Bank Burst Flash memories Micron
M58WR064KT 64Mb Multi Bank Burst Flash memories Micron
M58WR064T FLASH MEMORY STMicroelectronics
M58WR032KB 32Mb Multi Bank Burst Flash memories Micron

Other Datasheets by STMicroelectronics

Part Number Description
M58WR064HT 1.8 V supply Flash memories
M58WR064EB 64 Mbit 4Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory
M58WR064ET 64 Mbit 4Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory
M58WR064KL Flash memories
M58WR064KU Flash memories

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com M58WR064HT M58WR064HB 64 Mbit (4 Mb x16, multiple bank, burst) 1.8 V supply Flash memories Features ■ Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2.