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M58WR064HB - 1.8 V supply Flash memories

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ST Microelectronics

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M58WR064HB 1.8 V supply Flash memories by ST Microelectronics - Datasheet Preview — Datasheet preview – M58WR064HB

Datasheet Details

Part number	M58WR064HB
Manufacturer	STMicroelectronics
File Size	1.06 MB
Description	1.8 V supply Flash memories
Datasheet	M58WR064HB Datasheet
Additional preview pages of the M58WR064HB datasheet.

Product details

Description

. . . .

Features

Supply voltage.
VDD = 1.7 V to 2 V for program, erase and read.
VDDQ = 1.7 V to 2.24 V for I/O buffers.
VPP = 12 V for fast program (optional) Synchronous/asynchronous read.
Synchronous burst read mode: 66 MHz.
Asynchronous/synchronous page read mode.
Random access: 60 ns, 70 ns Synchronous burst read suspend Programming time.
8 µs by word typical for fast factory program.
Double/quadruple word program option.

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Published: Jan 19, 2008 |