M58WR064T Datasheet | STMicroelectronics

M58WR064T M58WR064B 64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory PRODUCT PREVIEW Features SUMMARY s SUPPLY VOLTAGE - VDD = 1.65V to 2.2V for Program, Erase and Read - VDDQ = 1.65V to 3.3V for I/O Buffers - VPP = 12V for fast Program (optional) s Figure 1. Packages SYNCHRONOUS / ASYNCHRONOUS READ - Synchronous Burst Read mode : 52MHz - Asynchronous/ Synchronous Page Read mode - Random Access: 70, 85, 100 ns FBGA s PROGRAMMING TIME - 8µs by Word typical for Fast Factory Program - Double/Quadruple Word Program option - Enhanced Factory Program options VFBGA56 (ZB) 7.7 x 9 mm .. s MEMORY BLOCKS - Multiple Bank Memory Array: 4 Mbit Banks -...