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M58WR064B

Manufacturer: STMicroelectronics

M58WR064B datasheet by STMicroelectronics.

M58WR064B datasheet preview

M58WR064B Datasheet Details

Part number M58WR064B
Datasheet M58WR064B_STMicroelectronics.pdf
File Size 521.00 KB
Manufacturer STMicroelectronics
Description FLASH MEMORY
M58WR064B page 2 M58WR064B page 3

M58WR064B Overview

VFBGA Connections (Top view through package). 10 Address Inputs (A0-A21). 10 Data Input/Output (DQ0-DQ15).

M58WR064B Key Features

  • VDD = 1.65V to 2.2V for Program, Erase and Read
  • VDDQ = 1.65V to 3.3V for I/O Buffers
  • VPP = 12V for fast Program (optional)
  • Synchronous Burst Read mode : 52MHz
  • Asynchronous/ Synchronous Page Read mode
  • Random Access: 70, 85, 100 ns
  • 8µs by Word typical for Fast Factory Program
  • Double/Quadruple Word Program option
  • Enhanced Factory Program options
  • Multiple Bank Memory Array: 4 Mbit Banks

M58WR064EB from other manufacturers

View M58WR064EB datasheet index

Brand Logo Part Number Description Other Manufacturers
ST Microelectronics Logo M58WR064EB 64 Mbit 4Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory ST Microelectronics
ST Microelectronics Logo M58WR064ET 64 Mbit 4Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory ST Microelectronics
ST Microelectronics Logo M58WR064HB 1.8 V supply Flash memories ST Microelectronics
ST Microelectronics Logo M58WR064HT 1.8 V supply Flash memories ST Microelectronics
Micron Logo M58WR064KB 64Mb Multi Bank Burst Flash memories Micron
STMicroelectronics logo - Manufacturer

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M58LR128GB 128 Mbit (8Mb x16- Multiple Bank Multi-Level - Burst) 1.8V Supply Flash Memory
M58LR128GL 128 and 256Mbit 1.8V supply Flash memories
M58LR128GT 128 Mbit (8Mb x16- Multiple Bank Multi-Level - Burst) 1.8V Supply Flash Memory
M58LR128GU 128 and 256Mbit 1.8V supply Flash memories
M58LR256GL 128 and 256Mbit 1.8V supply Flash memories

M58WR064B Distributor

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