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M58WR064B - FLASH MEMORY

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Part Number Description Manufacturer
M58WR064EB 64 Mbit 4Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory ST Microelectronics
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M58WR064HB 1.8 V supply Flash memories ST Microelectronics
M58WR064HT 1.8 V supply Flash memories ST Microelectronics
M58WR064KB 64Mb Multi Bank Burst Flash memories Micron

Other Datasheets by STMicroelectronics

Part Number Description
M58WR064T FLASH MEMORY
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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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M58WR064T M58WR064B 64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figure 1. Packages SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode : 52MHz – Asynchronous/ Synchronous Page Read mode – Random Access: 70, 85, 100 ns FBGA s PROGRAMMING TIME – 8µs by Word typical for Fast Factory Program – Double/Quadruple Word Program option – Enhanced Factory Program options VFBGA56 (ZB) 7.7 x 9 mm www.DataSheet4U.