FEATURES
SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figure 1. Packages SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode : 52MHz – Asynchronous/ Synchronous Page Read mode – Random Access: 70, 85, 100 ns FBGA s PROGRAMMING TIME – 8µs by Word typical for Fast Factory Program – Double/Quadruple Word Program option – Enhanced Factory Program options VFBGA56 (ZB) 7.7 x 9 mm s MEMORY BLOCKS – Multiple Bank Memory Array: 4 Mbit Banks – Parameter Blocks (Top or Bottom location) s ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code, M58WR064T: 8810h – Bottom Device Code, M58WR064B: 8811h s DUAL OPERATIONS – Program Erase in one Bank while Read in others – No delay between Read and Write operations s BLOCK LOCKING – All blocks locked at Power up – Any combination of blocks can be locked – WP for Block Lock-Down s SECURITY – 128 bit user programmable OTP cells...
STMicroelectronics
