M58WR064EB Datasheet | STMicroelectronics

M58WR064ET M58WR064EB 64 Mbit (4Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory Features SUMMARY s SUPPLY VOLTAGE - VDD = 1.65V to 2.2V for Program, Erase and Read - VDDQ = 1.65V to 3.3V for I/O Buffers - VPP = 12V for fast Program (optional) s Figure 1. Package SYNCHRONOUS / ASYNCHRONOUS READ - Synchronous Burst Read mode: 54MHz - Asynchronous/ Synchronous Page Read mode - Random Access: 70, 80, 100 ns FBGA s PROGRAMMING TIME - 8µs by Word typical for Fast Factory Program - Double/Quadruple Word Program option - Enhanced Factory Program options VFBGA56 (ZB) 7.7 x 9 mm s MEMORY BLOCKS - Multiple Bank Memory Array: 4 Mbit Banks - Parameter Blocks (Top or Bottom location)...