MT5C2565 - 64K x 4 SRAM

Datasheet Summary

Description

The MT5C2565 is organized as a 65,536 x 4 SRAM using a four-transistor memory cell with a high-speed, low-power

Features

High speed: 10, 12, 15, 20, 25 and 35ns.
High-performance, low-power, CMOS double-metal process.
Single +5V ±10% power supply.
Easy memory expansion with CE and OE options.
All inputs and outputs are TTL-compatible.

Micron

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Datasheet Details

Part number	MT5C2565
Manufacturer	Micron
File Size	556.04 KB
Description	64K x 4 SRAM
Datasheet	MT5C2565 Datasheet
Additional preview pages of the MT5C2565 datasheet.

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Full PDF Text Transcription

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SRAM FEATURES • High speed: 10, 12, 15, 20, 25 and 35ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE options • All inputs and outputs are TTL-compatible OPTIONS • Timing IOns access 12ns access 15ns access 20ns access 25ns access 35ns access • Packages Plastic DIP (300 mil) Plastic SOJ (300 mil) MARKING -10 -12 -15 -20 -25 -35 None DJ • 2V data retention • Lowpower L P • Temperature Commercial (O°C to +70°C) Industrial (-40°C to +85°C) Automotive (-40°C to +125°C) Extended (-55°C to +125°C) None IT AT XT • Part Number Example: MT5C2565DJ-35 P NOTE: Not all combinations of operating temperature, speed, data retention and low power are necessarily available.

Published: Apr 28, 2019 |