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MT5C2565 - 64K x 4 SRAM MEMORY ARRAY

General Description

The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell.

Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology.

Key Features

  • High Speed: 12, 15, 20, 25, 35, and 45ns Battery Backup: 2V data retention Low power standby High-performance, low-power, CMOS double-metal process.
  • Single +5V (+10%) Power Supply.
  • Easy memory expansion with CE.
  • All inputs and outputs are TTL compatible NC A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 CE OE Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 Vcc A15 A14 A13 A12 A11 A10 NC NC DQ4 DQ3 DQ2 DQ1 WE A1.

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Datasheet Details

Part number MT5C2565
Manufacturer ASI
File Size 122.48 KB
Description 64K x 4 SRAM MEMORY ARRAY
Datasheet download datasheet MT5C2565 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SRAM Austin Semiconductor, Inc.