MT5C2565 Description
The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Austin Semiconductor offers chip enable (CE) and output enable (OE) capability.
MT5C2565 Key Features
- High Speed: 12, 15, 20, 25, 35, and 45ns Battery Backup: 2V data retention Low power standby High-performance, low-power
- Single +5V (+10%) Power Supply
- Easy memory expansion with CE
- All inputs and outputs are TTL patible
- Package(s) Ceramic DIP (300 mil) Ceramic LCC
- 15 -20 -25 -35 -45 -55- -70
MT5C2565 Applications
- Operating Temperature Ranges Industrial (-40oC to +85oC) IT Military (-55oC to +125oC) XT