MT5C2568
Description
The MT5C2568 is organized as a 32,768 x 8 SRAM using a four-transistor memory cell with a high-speed, low-power.
Key Features
- High speed: 10,12,15,20,25 and 35ns
- High-performance, low-power, CMOS double-metal process
- Single +5V ±1O% power supply
- Easy memory expansion with CE and OE options
- All inputs and outputs are TTL-compatible OPTIONS
- Timing IOns access 12ns access 15ns access 20ns access 25ns access 35ns access MARKING -10 -12 -15 -20 -25 -35
- Packages Plastic DIP (300 mil) Plastic SOJ (300 mil) None DJ
- 2V data retention
- Lowpower L P
- Temperature Commercial (O°C to +70°C) Industrial (-40°C to +85°C) Automotive (-40°C to +125°C) Extended (-55°C to +125°C) None IT AT XT
