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MT5LC256K16D4 - 256K x 16 SRAM

Key Features

  • All I/O pins are 5V tolerant.
  • High speed: 12, 15,20, 25 and 35ns.
  • Multiple center power and ground pins for improved noise immunity.
  • Single +3.3V ±0.3V power supply.
  • Easy memory expansion with chip enable(CE) and output enable (OE) options.
  • All inputs and outputs are TTL-compatible.
  • Fast OE access time: 6, 8, 10, 12, and 15ns.
  • High-performance, low-power, CMOS double-metal process Complies to JEDEC low-voltage TTL standards.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ADVANCE SRAM FEATURES • All I/O pins are 5V tolerant • High speed: 12, 15,20, 25 and 35ns • Multiple center power and ground pins for improved noise immunity • Single +3.3V ±0.