M29W256GL

The M29W256GL is Parallel NOR Flash Embedded Memory designed by Micron Technology.

Product Overview

Micron Technology

Datasheet Details

Part number	M29W256GL, M29W256GH
Manufacturer	Micron Technology
File Size	0.97 MB
Description	Parallel NOR Flash Embedded Memory
Datasheet	M29W256GH-MicronTechnology.pdf
Note	This datasheet PDF includes multiple part numbers: M29W256GL, M29W256GH. Please refer to the document for exact specifications by model.
Additional preview pages of the M29W256GL datasheet.

Product details

Description

7 Signal Assignments 8 Signal Descriptions 10 Memory Organization 11 Memory Configuration 11 Memory Map 256Mb Density 11 Bus Operations 12 Read 12 Write 12 Standby and Automatic Standby 12 Output Disable 13 Reset 13 Registers 14 Status Register 14 Lock Register 19 Standard Command Definitions Address/Data Cycles 21 READ Operations 23 READ/RESET Command 23 READ CFI Command 23 AUTO SELECT Operations 24 AUTO SELECT Command 24 Bypass Operations 27 UNLOCK BYP

Features

Parallel NOR Flash Embedded Memory M29W256GH, M29W256GL Features.
Supply voltage.
VCC = 2.7.
3.6V (program, erase, read).
VCCQ = 1.65.
3.6V (I/O buffers).
VPPH = 12V for fast program (optional).
Asynchronous random/page read.
Page size: 8 words or 16 bytes.
Page access: 25ns, 30ns.
Random access: 60ns1, 70ns, 80ns.
Fast program commands: 32-word (64-byte) write buffer.
Enhanced buffered progr.

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Other Datasheets by Micron Technology

M29W256GH - Parallel NOR Flash Embedded Memory

Published: Aug 28, 2014 |