M29W256GH Overview
Key Features
- Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65–3.6V (I/O buffers) – VPPH = 12V for fast program (optional)
- Asynchronous random/page read – Page size: 8 words or 16 bytes – Page access: 25ns, 30ns – Random access: 60ns1, 70ns, 80ns
- Fast program commands: 32-word (64-byte) write buffer
- Enhanced buffered program commands: 256-word
- Program time – 16µs per byte/word TYP – Chip program time: 10s with V PPH and 16s without V PPH
- Memory organization – Uniform blocks: 256 main blocks, 128KB, or 64Kwords each
- Program/erase controller – Embedded byte/word program algorithms
- Unlock bypass, block erase, chip erase, write to buffer and program – Fast buffered/batch programming – Fast block/chip erase
- VPP/WP# pin protection – Protects first or last block regardless of block -protection settings
- Software protection – Volatile protection – Nonvolatile protection – Password protection
