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M29W256GL - Parallel NOR Flash Embedded Memory

This page provides the datasheet information for the M29W256GL, a member of the M29W256GH Parallel NOR Flash Embedded Memory family.

Description

7 Signal Assignments 8 Signal Descriptions 10 Memory Organization 11 Memory Configuration 11 Memory Map 256Mb Density 11 Bus Operations 12 Read 12 Write 12 Standby and Automatic Standby 12 Output Disable 13 Reset 13 Registers 14 Status Register 14 Lock Register 19 Standard C

Features

  • Parallel NOR Flash Embedded Memory M29W256GH, M29W256GL Features.
  • Supply voltage.
  • VCC = 2.7.
  • 3.6V (program, erase, read).
  • VCCQ = 1.65.
  • 3.6V (I/O buffers).
  • VPPH = 12V for fast program (optional).
  • Asynchronous random/page read.
  • Page size: 8 words or 16 bytes.
  • Page access: 25ns, 30ns.
  • Random access: 60ns1, 70ns, 80ns.
  • Fast program commands: 32-word (64-byte) write buffer.
  • Enhanced buffered progr.

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Datasheet preview – M29W256GL

Datasheet Details

Part number M29W256GL
Manufacturer Micron Technology
File Size 0.97 MB
Description Parallel NOR Flash Embedded Memory
Datasheet download datasheet M29W256GL Datasheet
Additional preview pages of the M29W256GL datasheet.

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Full PDF Text Transcription

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256Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W256GH, M29W256GL Features • Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65–3.
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