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MT28F016S5 - 2 MEG x 8 SMART 5 EVEN-SECTORED FLASH MEMORY

General Description

The MT28F016S5 is a nonvolatile, electrically blockerasable (flash), programmable, read-only memory containing 2,097,152 bytes (8 bits).

Writing or erasing the device is done with a 5V VPP voltage, while all operations are performed with a 5V VCC.

Key Features

  • Thirty-two 64KB erase blocks.
  • Deep Power-Down Mode: 10µA MAX.
  • Smart 5 technology: 5V ±10% VCC 5V ±10% VPP.

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Full PDF Text Transcription for MT28F016S5 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MT28F016S5. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com ADVANCE 2 MEG x 8 SMART 5 EVEN-SECTORED FLASH MEMORY FLASH MEMORY FEATURES • Thirty-two 64KB erase blocks • Deep Power-Down Mode: 10µA MAX • Smart 5 t...

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rty-two 64KB erase blocks • Deep Power-Down Mode: 10µA MAX • Smart 5 technology: 5V ±10% VCC 5V ±10% VPP application/production programming 12V VPP tolerant compatibility production programming • Address access time: 90ns • Industry-standard pinouts • Inputs and outputs are fully TTL-compatible • Automated write and erase algorithm • Two-cycle WRITE/ERASE sequence MT28F016S5 5V Only, Dual Supply (Smart 5) PIN ASSIGNMENT (Top View) 40-Pin TSOP Type I OPTIONS • Timing 90ns access MARKING -9 • Package Plastic 40-pin TSOP Type 1 (10mm x 20mm) Part Number Example: A19 A18 A17 A16 A15 A14 A13 A12 CE# VCC VPP RP# A11 A10 DataShee

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