Datasheet Summary
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2Mb SMART 3 BOOT BLOCK FLASH MEMORY
FLASH MEMORY
MT28F002B3 MT28F200B3
3V Only, Dual Supply (Smart 3)
40-Pin TSOP Type I 48-Pin TSOP Type I
- Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks
- Smart 3 technology (B3): 3.3V ± 0.3V VCC 3.3V ± 0.3V VPP application programming 5V ±10% VPP application/production programming 44-Pin SOP 12V ± 5% VPP patibility production programming
- Address access times: 90ns, 100ns
- 100,000 ERASE cycles
- Industry-standard pinouts
- Inputs and outputs are fully TTL-patible ee DataSh
- Automated write and erase algorithm
- Two-cycle WRITE/ERASE sequence .
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