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MT28F002B3 - FLASH MEMORY

Download the MT28F002B3 datasheet PDF. This datasheet also covers the MT28F200B3 variant, as both devices belong to the same flash memory family and are provided as variant models within a single manufacturer datasheet.

General Description

Byte-wide READ and WRITE only The MT28F002B3 (x8) and MT28F200B3 (x16/x8) (MT28F002B3, 256K x 8) are nonvolatile, electrically block-erasable (flash), pro TSOP and SOP packaging options grammable, read-only memories containing 2,097,152 bits organized as 131,072 words (16 bits) or

Key Features

  • 1 Micron Technology, Inc. , reserves the right to change products or specifications without notice. ©2000, Micron Technology, Inc. DataSheet 4 U . com www. DataSheet4U. com 2Mb SMART 3 BOOT BLOCK FLASH MEMORY PIN.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT28F200B3_MicronTechnology.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com 2Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F002B3 MT28F200B3 3V Only, Dual Supply (Smart 3) 40-Pin TSOP Type I 48-Pin TSOP Type I • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks • Smart 3 technology (B3): 3.3V ± 0.3V VCC 3.3V ± 0.3V VPP application programming 5V ±10% VPP application/production programming 44-Pin SOP 12V ± 5% VPP compatibility production programming • Address access times: 90ns, 100ns • 100,000 ERASE cycles • Industry-standard pinouts • Inputs and outputs are fully TTL-compatible ee DataSh • Automated write and erase algorithm • Two-cycle WRITE/ERASE sequence DataSheet4U.