MT28F008B5
Overview
- Eleven erase blocks: 16KB/8K-word boot block (protected) 40-Pin TSOP Type I 48-Pin TSOP Type I Two 8KB/4K-word parameter blocks
- Eight main memory blocks
- Smart 5 technology (B5): 5V ±10% VCC 5V ±10% VPP application/ production programming1
- Advanced 0.18µm CMOS floating-gate process 44-Pin SOP2
- Compatible with 0.3µm Smart 5 device
- Address access time: 80ns
- 100,000 ERASE cycles
- Industry-standard pinouts
- Automated write and erase algorithm
- Two-cycle WRITE/ERASE sequence DataShee
