Micron Technology MT28F008B3
The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). These devices are fabricated with Micron’s advanced 0.18µm CMOS floating-gate process. The MT28F008B3 and MT28F800B3 are organized into eleven separately erasable blocks.| Part No. | MT28F008B3 |
|---|---|
| Datasheet | MT28F008B3 Download |
| Manufacturer |  Micron Technology |
| Description | FLASH MEMORY |
| Buy | Stock & Price |
FEATURES
● Eleven erase blocks: 40-Pin 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Eight main memory blocks● Smart 3 technology (B3): 3.3V ±0.3V VCC 3.3V ±0.3V VPP application programming 5V ±10% VPP application/production programming1
● Compatible with 0.3µm Smart 3 device
● Advanced 0.18µm CMOS floating-gate process
● Address access time: 90ns
● 100,000 ERASE cycles
● Industry-standard pinouts
● Inputs and outputs are fully TTL-compatible
● Automated write and erase algorithm
● Two-cycle WRITE/ERASE sequence DataSheet4U.com
● TSOP, SOP and FBGA packaging options
● Byte- or word-wide READ and WRITE (MT28F800B3): 1 Meg x 8/512K x 16 TSOP Type I 48-Pin TSOP Type I 44-Pin SOP DataShee OPTIONS
● Timing 90ns access
● Configurations 1 Meg x 8 512K x 16/1 Meg x 8
● Boot Block Starting Word Address Top (7FFFFh) Bottom (00000h)
● Operating Temperature Range Commercial (0ºC to +70ºC) Extended (-40ºC to +85ºC)
● Packages 40-pin TSOP Type I (MT28F008B3) 48-pin TSOP Type...
