Datasheet Summary
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8Mb SMART 3 BOOT BLOCK FLASH MEMORY
FLASH MEMORY
MT28F008B3 MT28F800B3
3V Only, Dual Supply (Smart 3)
Features
- Eleven erase blocks: 40-Pin 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Eight main memory blocks
- Smart 3 technology (B3): 3.3V ±0.3V VCC 3.3V ±0.3V VPP application programming 5V ±10% VPP application/production programming1
- patible with 0.3µm Smart 3 device
- Advanced 0.18µm CMOS floating-gate process
- Address access time: 90ns
- 100,000 ERASE cycles
- Industry-standard pinouts
- Inputs and outputs are fully TTL-patible
- Automated write and erase algorithm
- Two-cycle WRITE/ERASE sequence .
- TSOP, SOP...