MT29C4G96MAZAPCJG-5IT
Key Features
- Low-voltage operation (1.70-1.95V)
- Industrial temperature range: -40°C to +85°C * * *
- Page size - x8: 2112 bytes (2048 + 64 bytes) - x16: 1056 words (1024 + 32 words)
- Block size: 64 pages (128K + 4K bytes) LPDRAM Power LPDRAM Device LPDRAM Interface Mobile LPDDR-Specific Features * * * * * * *
- No external voltage reference required No minimum clock rate requirement 1.8V LVCMOS-compatible inputs Programmable burst lengths Partial-array self refresh (PASR) Deep power-down (DPD) mode Selectable output drive strength STATUS REGISTER READ (SRR) supported1 Notes:
- Contact factory for remapped SRR output.
- For physical part markings, see Part Numbering Information (page 2). PDF: 09005aef83ba4387 168ball_nand_lpddr_j42p_j4z2_j4z3_omap.pdf - Rev. F 03/10 1 ‡Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by Micron without notice. Products are only warranted by Micron to meet Micron’s production data sheet specifications. Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron Technology, Inc. All rights reserved. Micron Confidential and Proprietary Preliminary 168-Ball NAND Flash and LPDDR PoP (TI OMAP) MCP Features Part Numbering Information Micron NAND Flash and LPDRAM devices are available in different configurations and densities. The MCP/PoP part numbering guide is available at www.micron.com/numbering. Figure 2: Part Number Chart
