MT29F4G08BABWP
MT29F4G08BABWP is 8Gb x8/x16 Multiplexed NAND Flash Memory manufactured by Micron Technology.
Features
NAND Flash Memory
MT29F2G08AABWP/MT29F2G16AABWP MT29F4G08BABWP/MT29F4G16BABWP MT29F8G08FABWP
Features
- Organization:
- Page size: x8: 2,112 bytes (2,048 + 64 bytes) x16: 1,056 words (1,024 + 32 words)
- Block size: 64 pages (128K + 4K bytes)
- Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks; 8Gb: 8,192 blocks
- Read performance:
- Random read: 25µs
- Sequential read: 30ns (3V x8 only)
- Write performance:
- Page program: 300µs (TYP)
- Block erase: 2ms (TYP)
- Endurance: 100,000 PROGRAM/ERASE cycles
- Data retention: 10 years
- First block (block address 00h) guaranteed to be valid without ECC (up to 1,000 PROGRAM/ERASE cycles)
- VCC: 2.7V- 3.6V
- Automated PROGRAM and ERASE
- Basic NAND mand set:
- PAGE READ, RANDOM DATA READ, READ ID,
READ STATUS, PROGRAM PAGE, RANDOM DATA INPUT, PROGRAM PAGE CACHE MODE, INTERNAL DATA MOVE, INTERNAL DATA MOVE with RANDOM DATA INPUT, BLOCK ERASE, RESET
- New mands:
- PAGE READ CACHE MODE
- READ UNIQUE ID (contact factory)
- READ ID2 (contact factory)
- Operation status byte provides a software method of detecting:
- PROGRAM/ERASE operation pletion
- PROGRAM/ERASE pass/fail condition
- Write-protect status
- Ready/busy# (R/B#) pin provides a hardware method of detecting PROGRAM or ERASE cycle pletion
- PRE pin: prefetch on power up
- WP# pin: hardware write protect
Figure 1: 48-Pin TSOP Type 1
Options
Marking
- Density:
2Gb (single die)
MT29F2Gxx AAB
4Gb (dual-die...
