Part MT29F4G08AAA
Description NAND Flash Memory
Manufacturer Micron Technology
Size 2.32 MB
Micron Technology
MT29F4G08AAA

Overview

  • Single-level cell (SLC) technology
  • Organization - Page size x8: 2,112 bytes (2,048 + 64 bytes) - Block size: 64 pages (128K + 4K bytes) - Plane size: 2,048 blocks - Device size: 4Gb: 4,096 blocks; 8Gb: 8,192 blocks; 16Gb: 16,384 blocks
  • READ performance - Random READ: 25µs (MAX) - Sequential READ: 25ns (MIN)
  • WRITE performance - PROGRAM PAGE: 220µs (TYP) - BLOCK ERASE: 1.5ms (TYP)
  • Data retention: 10 years
  • Endurance: 100,000 PROGRAM/ERASE cycles
  • First block (block address 00h) guaranteed to be valid up to 1,000 PROGRAM/ERASE cycles1
  • Industry-standard basic NAND Flash command set
  • Advanced command set: - PROGRAM PAGE CACHE MODE - PAGE READ CACHE MODE - One-time programmable (OTP) commands - Two-plane commands - Interleaved die operations - READ UNIQUE ID (contact factory) - READ ID2 (contact factory)
  • Operation status byte provides a software method of detecting: - Operation completion - Pass/fail condition - Write-protect status