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MT29F4G08BACWP - NAND Flash Memory

Download the MT29F4G08BACWP datasheet PDF. This datasheet also covers the MT29F2G08AACWP variant, as both devices belong to the same nand flash memory family and are provided as variant models within a single manufacturer datasheet.

General Description

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Key Features

  • NAND Flash Memory MT29F2G08AACWP, MT29F4G08BACWP, MT29F8G08FACWP For the latest data sheet, please refer to the Micron Web site: www. micron. com/datasheets Features.
  • Organization.
  • Page size x8: 2,112 bytes (2,048 + 64 bytes).
  • Page size x16: 1,056 words (1,024 + 32 words).
  • Block size: 64 pages (128K + 4K bytes).
  • Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks; 8Gb: 8,192 blocks.
  • READ performance.
  • RANDOM READ: 25µs.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT29F2G08AACWP_MicronTechnology.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Micron Technology

Part Number Description
MT29F4G08BABWP 8Gb x8/x16 Multiplexed NAND Flash Memory
MT29F4G16BABWP 8Gb x8/x16 Multiplexed NAND Flash Memory
MT29F1G01AAADD 1Gb x1: SPI NAND Flash Memory
MT29F1G08AACH4 NAND Flash Memory
MT29F1G08AACWP NAND Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2Gb, 4GB, 8Gb: x8, x16 NAND Flash Memory Features NAND Flash Memory MT29F2G08AACWP, MT29F4G08BACWP, MT29F8G08FACWP For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets Features • Organization • Page size x8: 2,112 bytes (2,048 + 64 bytes) • Page size x16: 1,056 words (1,024 + 32 words) • Block size: 64 pages (128K + 4K bytes) • Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks; 8Gb: 8,192 blocks • READ performance • RANDOM READ: 25µs • SEQUENTIAL READ: 30ns (3V x8 only) • WRITE performance • PROGRAM PAGE: 300µs (TYP) • BLOCK ERASE: 2ms (TYP) • Endurance: 100,000 PROGRAM/ERASE cycles • First block (block address 00h) guaranteed to be valid without ECC (up to 1,000 PROGRAM/ERASE cycles) • VCC: 1.70V–1.95V1 or 2.7V–3.