MT46H32M16LF - Mobile Low-Power DDR SDRAM

Micron Technology

MT46H32M16LF Datasheet Preview — Preview of MT46H32M16LF PDF

Datasheet Details

Part number	MT46H32M16LF
Manufacturer	Micron Technology
File Size	1.05 MB
Description	Mobile Low-Power DDR SDRAM
Datasheet	MT46H32M16LF-MicronTechnology.pdf

MT46H32M16LF Product details

Description

8 Functional Block Diagrams 9 Ball Assignments 11 Ball Descriptions 13 Package Dimensions 15 Electrical Specifications 17 Electrical Specifications IDD Parameters 20 Electrical Specifications AC Operating Conditions 26 Output Drive Characteristics 31 Functional Description 34 Commands 35 DESELECT 36 NO OPERATION 36 LOAD MODE REGISTER 36 ACTIVE 36 READ 37 WRITE 38 PRECHARGE 39 BURST TERMINATE 40 AUTO REFRESH 40 SELF REFRESH 41 DEEP POWER-DOWN 41 Truth Tab

Features

Mobile Low-Power DDR SDRAM MT46H32M16LF.
8 Meg x 16 x 4 banks MT46H16M32LF.
4 Meg x 32 x 4 banks MT46H16M32LG.
4 Meg x 32 x 4 banks Features.
VDD/VDDQ = 1.70.
1.95V.
Bidirectional data strobe per byte of data (DQS).
Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle.
Differential clock inputs (CK and CK#).
Commands entered on each positive CK edge.
DQS edge-aligned wit.

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Published: Oct 11, 2014 |